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STS4DNF60L PDF预览

STS4DNF60L

更新时间: 2024-09-24 22:15:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
5页 73K
描述
N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

STS4DNF60L 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.11Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:4354
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:ST SO-8_3
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
其他特性:LOW THRESHOLD雪崩能效等级(Eas):80 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):16 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STS4DNF60L 数据手册

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STS4DNF60L  
®
N - CHANNEL 60V - 0.045- 4A SO-8  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
STS4DNF60L  
VDSS  
RDS(on)  
< 0.055 Ω  
ID  
4 A  
60 V  
TYPICAL RDS(on) = 0.045 Ω  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW THRESHOLD DRIVE  
DESCRIPTION  
This Power MOSFET is the second generation of  
STMicroelectronics unique " Single Feature  
Size  
" strip-based process. The resulting  
SO-8  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR DRIVE  
DC-DC CONVERTERS  
BATTERY MANAGMENT IN NOMADIC  
EQUIPMENT  
POWER MANAGMENT IN  
PORTABLE/DESKTOP PCs  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
60  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
V
A
VDGR  
VGS  
60  
± 20  
4
ID  
Drain Current (continuous) at Tc = 25 oC  
Single Operation  
o
Drain Current (continuous) at Tc = 100 C  
2.5  
A
Single Operation  
IDM()  
Drain Current (pulsed)  
16  
A
o
Ptot  
Total Dissipation at Tc = 25 C Dual Operation  
2
1.6  
W
W
o
Total Dissipation at Tc = 25 C Single Operation  
() Pulse width limited by safe operating area  
1/5  
December 1998  

STS4DNF60L 替代型号

型号 品牌 替代类型 描述 数据表
FDS9945 FAIRCHILD

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60V N-Channel PowerTrench MOSFET

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