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STS3DPFS30 PDF预览

STS3DPFS30

更新时间: 2024-11-23 22:14:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 73K
描述
P - CHANNEL 30V - 0.065ohm - 3A - S0-8 STripFETO MOSFET PLUS SCHOTTKY RECTIFIER

STS3DPFS30 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SO-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.79
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.09 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STS3DPFS30 数据手册

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STS3DPFS30  
®
P - CHANNEL 30V - 0.065- 3A - S0-8  
STripFET MOSFET PLUS SCHOTTKY RECTIFIER  
PRELIMINARY DATA  
MAIN PRODUCT CHARACTERISTICS  
VDSS  
RDS(on)  
ID  
MOSFET  
30V  
IF(AV)  
3A  
0.09Ω  
VRRM  
30V  
3A  
VF(MAX)  
0.51V  
SCHOTTKY  
SO-8  
DESCRIPTION:  
This product associates the latest low voltage  
StripFET  
in p-channel version to a low drop  
INTERNAL SCHEMATIC DIAGRAM  
Schottky diode. Such configuration is extremely  
versatile in implementing, a large variety of DC-DC  
converters for printers, portable equipment, and  
cellular phones.  
MOSFET ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Value  
30  
Unit  
V
V
V
A
A
A
W
30  
± 20  
3
o
Drain Current (continuous) at Tc = 25 C  
o
ID  
Drain Current (continuous) at Tc = 100 C  
1.9  
12  
I
DM()  
Drain Current (pulsed)  
o
Ptot  
Total Dissipation at Tc = 25 C  
2
SCHOTTKY ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
VRRM  
Repetitive Peak Reverse Voltage  
IF(RMS) RMS Forward Current  
20  
A
o
IF(AV)  
IFSM  
IRRM  
Average Forward Current  
TL=125 C  
δ =0.5  
3
A
Surge Non Repetitive Forward Current  
Repetitive Peak Reverse Current  
tp= 10 ms  
Sinusoidal  
75  
1
A
A
tp=2 µs  
F=1 kHz  
IRSM  
Non Repetitive Peak Reverse Current  
Critical Rate Of Rise Of Reverse Voltage  
tp=100 µs  
1
A
dv/dt  
10000  
V/µs  
() Pulse width limited by safe operating area  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed  
1/5  
February 1999  

STS3DPFS30 替代型号

型号 品牌 替代类型 描述 数据表
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