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STS3DPFS40 PDF预览

STS3DPFS40

更新时间: 2024-11-24 08:58:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 49K
描述
P-CHANNEL 40V - 0.070ohm - 3A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

STS3DPFS40 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STS3DPFS40 数据手册

 浏览型号STS3DPFS40的Datasheet PDF文件第2页浏览型号STS3DPFS40的Datasheet PDF文件第3页浏览型号STS3DPFS40的Datasheet PDF文件第4页浏览型号STS3DPFS40的Datasheet PDF文件第5页浏览型号STS3DPFS40的Datasheet PDF文件第6页 
STS3DPFS40  
P-CHANNEL 40V - 0.070- 3A SO-8  
STripFET MOSFET PLUS SCHOTTKY RECTIFIER  
PRELIMINARY DATA  
MAIN PRODUCT CHARACTERISTICS  
V
R
DS(on)  
I
D
MOSFET  
DSS  
40 V  
< 0.1 Ω  
3 A  
I
V
V
F(MAX)  
SCHOTTKY  
F(AV)  
RRM  
3 A  
40 V  
0.51 V  
SO-8  
DESCRIPTION  
This product associates the latest low voltage  
STripFET in p-channel version to a low drop  
INTERNAL SCHEMATIC DIAGRAM  
Schottky diode. Such configuration is extremely ver-  
satile in implementing, a large variety of DC-DC  
converters for printers, portable equipment, and cel-  
lular phones.  
MOSFET ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-source Voltage (V = 0)  
Value  
40  
Unit  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
40  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
3
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
1.9  
12  
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
2
W
TOT  
C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Repetitive Peak Reverse Voltage  
RMS Forward Current  
Value  
40  
Unit  
V
V
RRM  
I
20  
A
F(RMS)  
I
Average Forward Current  
TL = 125°C  
δ = 0.5  
3
75  
1
A
F(AV)  
I
Surge Non Repetitive Forward Current  
Repetitive Peak Reverse Current  
tp = 10 ms  
Sinusoidal  
A
A
FSM  
I
tp = 2 µs  
RRM  
F = 1kHz  
I
Non Repetitive Peak Reverse Current  
Critical Rate Of Rise Of Reverse Voltage  
tp = 100 µs  
1
A
RSM  
dv/dt  
10000  
V/µs  
Note: For the P-CHANNEL MOSFET actual polarity of Voltages  
()Pulse width limited by safe operating area  
and current has to be reversed  
1/6  
November 2000  

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