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STS2DNFS30L PDF预览

STS2DNFS30L

更新时间: 2024-09-29 22:11:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 135K
描述
N-CHANNEL 30V - 0.09ohm - 3A SO-8 STripFET⑩ II MOSFET PLUS SCHOTTKY RECTIFIER

STS2DNFS30L 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STS2DNFS30L 数据手册

 浏览型号STS2DNFS30L的Datasheet PDF文件第2页浏览型号STS2DNFS30L的Datasheet PDF文件第3页浏览型号STS2DNFS30L的Datasheet PDF文件第4页浏览型号STS2DNFS30L的Datasheet PDF文件第5页浏览型号STS2DNFS30L的Datasheet PDF文件第6页 
STS2DNFS30L  
N-CHANNEL 30V - 0.09- 3A SO-8  
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER  
PRELIMINARY DATA  
MAIN PRODUCT CHARACTERISTICS  
V
DSS  
R
I
D
MOSFET  
DS(on)  
30 V  
< 0.11 Ω  
3 A  
I
V
RRM  
V
F(MAX)  
SCHOTTKY  
F(AV)  
1 A  
30 V  
0.46 V  
SO-8  
DESCRIPTION  
This product associates the latest low voltage  
STripFET™ in n-channel version to a low drop  
Schottky diode. Such configuration is extremely ver-  
satile in implementing, a large variety of DC-DC  
converters for printers, portable equipment, and cel-  
lular phones.  
INTERNAL SCHEMATIC DIAGRAM  
MOSFET ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
30  
V
DGR  
GS  
V
Gate- source Voltage  
± 15  
3
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
1.9  
12  
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
2
W
C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Repetitive Peak Reverse Voltage  
RMS Forward Current  
Value  
30  
Unit  
V
V
RRM  
I
7
A
F(RMS)  
I
Average Forward Current  
TL = 135°C  
1
A
F(AV)  
δ = 0.5  
I
Surge Non Repetitive Forward Current  
tp = 10 ms  
Sinusoidal  
45  
A
FSM  
I
Non Repetitive Peak Reverse Current  
Critical Rate Of Rise Of Reverse Voltage  
tp = 100 µs  
1
A
RSM  
dv/dt  
10000  
V/µs  
(•)Pulse width limited by safe operating area  
August 2001  
1/6  

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