Datasheet > STS3621

STS3621

更新时间： 2022-03-26 01:46:38

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
11页	195K
描述
Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

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STS3621 数据手册

S TS 3621

Oct. 24 2006

S amHop Microelectronics Corp.

Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

(N-Channel)

(P-Channel)

PR ODUCT S UMMAR Y

VDS S

30V

R DS (ON) ( m

Ω

) Max

VDS S

R DS (ON) ( m Ω ) Max

50 @ VGS = 10V

65 @ VGS = 4.5V

90 @ VGS = -10V

-30V

-2A

135 @ VGS = -4.5V

S OT 26

Top View

S 1

S 2

S 1

N-ch

P-ch

S 2

ABS OLUTE MAXIMUM R ATINGS (T =25 C unless otherwise noted)

Parameter

S ymbol

N-Channel P-Channel

Unit

Drain-S ource Voltage

Gate-S ource Voltage

VDS

-30

VGS

-2

25 C

70 C

Drain Current-Continuous @ Ta

2.7

1.8

-Pulsed ^b

IDM

-8

Drain-S ource Diode Forward Current ^a

1.25

-1.25

Ta= 25 C

Ta=70 C

1.25

0.8

Maximum Power Dissipation ^a

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 150

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient ^a

100

12 3 4 5 6 7...11

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