Datasheet > STS3401

STS3401

更新时间： 2024-09-30 03:30:47

品牌	Logo	应用领域
三合微科 - SAMHOP		/
页数	文件大小	规格书
7页	679K
描述
P-Channel E nhancement Mode MOSFET

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数据手册

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STS3401 数据手册

S TS 3401

S amHop Microelectronics C orp.

J un.15 2004

P -C hannel E nhancement Mode MOS FE T

PR ODUCT S UMMAR Y

FE ATUR E S

VDS S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

R DS (ON) ( m

Ω

) Max

75 @ VG S = -10V

-3A

-30V

S OT-23 P ackage.

100 @ VG S = -4.5V

S OT-23

ABS OLUTE MAXIMUM R ATING S (T

=25 C unless otherwise noted)

P arameter

Limit

- 30

Unit

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

- 3

Drain C urrent-C ontinuous ^a@ T

-P ulsed ^b

=125 C

- 10

Drain-S ource Diode Forward C urrent ^a

Maximum P ower Dissipation ^a

-1.25

1.25

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 150

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-Ambient ^a

J A

100

12 3 4 5 6 7

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与STS3401相关器件

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STS3403	SAMHOP	获取价格	P-Channel E nhancement Mode MOSFET
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STS3405	SAMHOP	获取价格	P-Channel E nhancement Mode Field Effect Transistor
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