Datasheet > STS3414

STS3414

更新时间： 2024-11-24 06:14:55

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
7页	153K
描述
N-Channel Enhancement Mode Field Effect Transistor

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STS3414 数据手册

STS3414

Ver 1.1

S mHop Microelectronics Corp.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

Rugged and reliable.

VDSS

RDS(ON) (mΩ) Max

50 @ VGS=10V

60 @ VGS=4.5V

75 @ VGS=2.5V

SOT-23 package.

30V

S OT-23

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

Limit

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

T_A=25 C

Drain Current-Continuous

I_DM

P_D

-Pulsed

T_A=25 C

1.25

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

T_J, T_STG

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

°C/W

100

Details are subject to change without notice.

Jan,16,2009

www.samhop.com.tw

12 3 4 5 6 7

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