STS3622

更新时间： 2024-11-24 03:30:47

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	798K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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STS3622 数据手册

S TS 3622

S amHop Microelectronics C orp.

J an, 03 2006

Dual N-Channel Enhancement Mode Field Effect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

65 @ VG S = 10V

90 @ VG S =4.5V

30V

S OT-26 package.

S OT26

Top View

G 1

S 1

S 2

G 2

G 1

S 2

S 1

AB S OL UTE MAXIMUM R ATING S (T =25 C unles s otherwis e noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous @ T

-P ulsed ^b

=25 C

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation ^a

1.25

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 150

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, J unction-to-Ambient ^a

thJ A

100

12 3 4 5 6 7 8

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