Datasheet > STS3401A

STS3401A

更新时间： 2024-09-30 19:05:15

品牌	Logo	应用领域
三合微科 - SAMHOP		/
页数	文件大小	规格书
7页	95K
描述
Transistor

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数据手册

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STS3401A 数据手册

STS3401A

S mHop Microelectronics Corp.

Ver 1.0

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for low RDS(ON)

PRODUCT SUMMARY

VDSS

RDS(ON) (m

) Max

Rugged and reliable.

79 @ VGS=-10V

Suface Mount Package.

-3.2A

-30V

127 @ VGS=-4.5V

S OT-23

)

(

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

Symbol

V_DS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Units

Limit

-30

V_GS

T_A=25 C

-3.2

-2.6

-12

1.25

0.8

I_D

Drain Current-Continuous

T_A=70 C

I_DM

P_D

-Pulsed

T_A=25 C

Maximum Power Dissipation

T_A=70 C

Operating Junction and Storage

Temperature Range

-55 to 150

°C

T_J, T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

100

°C/W

Details are subject to change without notice.

Jun,29,2011

www.samhop.com.tw

12 3 4 5 6 7

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