Datasheet > STS25NH3LL_07

STS25NH3LL_07

更新时间： 2024-09-30 03:30:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	312K
描述
N-channel 30 V - 0.0032 ヘ - 25 A - SO-8 STripFET⑩ III Power MOSFET for DC/DC conversion

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STS25NH3LL_07 数据手册

STS25NH3LL

N-channel 30 V - 0.0032 Ω - 25 A - SO-8

STripFET™ III Power MOSFET for DC/DC conversion

Features

Type

V_DSS

R_DS(on)

I_D

STS25NH3LL

30 V

<0.0035 Ω 25 A ⁽¹⁾

1. This value is rated according to Rthj-pcb

■ Optimal R

x Qg trade off @ 4.5 V

DS(on)

SO-8

■ Conduction losses reduced

■ Switching losses reduced

Applications

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This device utilizes the advanced design rules of

ST's proprietary STripFET™ technology. The

innovative process coupled with unique

metallization techniques makes it possible to

produce the most advanced low voltage Power

MOSFET in an SO-8 package. The device is

therefore suitable for demanding DC-DC

converter applications where high efficiency at

high output current is needed.

Table 1.

Order code

STS25NH3LL

Device summary

Marking

Package

SO-8

Packaging

25H3LL

Tape & reel

November 2007

Rev 10

1/11

www.st.com

12 3 4 5 6 7...11

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