Datasheet > STS26N3LLH6

STS26N3LLH6

更新时间： 2024-09-30 12:27:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	730K
描述
N-channel 30 V, 0.0038 Î©, 26 A, SO-8 STripFETâ¢ VI DeepGATEâ¢ Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STS26N3LLH6 数据手册

STS26N3LLH6

N-channel 30 V, 0.0038 Ω, 26 A, SO-8

STripFET™ VI DeepGATE™ Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

STS26N3LLH6

30 V

0.0044 Ω

26 A

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

■ High avalanche ruggedness

■ Low gate drive power losses

DS(on)

SO-8

■ Very low switching gate charge

Applications

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest R

packages.

in all

DS(on)

Table 1.

Order code

STS26N3LLH6

Device summary

Marking

Packag

SO-8

Packaging

26G3L

Tape and reel

October 2011

Doc ID 019030 Rev 2

1/14

www.st.com

12 3 4 5 6 7...14

中文翻译

下载PDF

与STS26N3LLH6相关器件

型号	品牌	获取价格	描述	数据表
STS2DNE60	STMICROELECTRONICS	获取价格	N - CHANNEL 60V - 0.180ohm - 2A SO-8 STripFET POWER MOSFET
STS2DNF30L	STMICROELECTRONICS	获取价格	N-CHANNEL 30V - 0.09 ohm - 3A SO-8 STripFET⑩
STS2DNF30L_07	STMICROELECTRONICS	获取价格	Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET
STS2DNF30L_0705	STMICROELECTRONICS	获取价格	Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET
STS2DNFS30L	STMICROELECTRONICS	获取价格	N-CHANNEL 30V - 0.09ohm - 3A SO-8 STripFET⑩ I
STS2DPF20V	STMICROELECTRONICS	获取价格	DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-D
STS2DPF80	STMICROELECTRONICS	获取价格	DUAL P-CHANNEL 80V - 0.21 Ohm - 2.3A SO-8
STS2DPFS20V	STMICROELECTRONICS	获取价格	P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRI
STS2NF100	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET⑩
STS30	ETC	获取价格	Fully calibrated and linearized digital output