Datasheet > STS26N3LLH6

STS26N3LLH6

更新时间： 2024-11-27 12:27:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	730K
描述
N-channel 30 V, 0.0038 Î©, 26 A, SO-8 STripFETâ¢ VI DeepGATEâ¢ Power MOSFET

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STS26N3LLH6 数据手册

STS26N3LLH6

N-channel 30 V, 0.0038 Ω, 26 A, SO-8

STripFET™ VI DeepGATE™ Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

STS26N3LLH6

30 V

0.0044 Ω

26 A

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

■ High avalanche ruggedness

■ Low gate drive power losses

DS(on)

SO-8

■ Very low switching gate charge

Applications

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest R

packages.

in all

DS(on)

Table 1.

Order code

STS26N3LLH6

Device summary

Marking

Packag

SO-8

Packaging

26G3L

Tape and reel

October 2011

Doc ID 019030 Rev 2

1/14

www.st.com

12 3 4 5 6 7...14

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