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STP60NF03L PDF预览

STP60NF03L

更新时间: 2024-11-22 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 49K
描述
N-CHANNEL 30V - 0.008 ohm - 60A TO-220 STripFET POWER MOSFET

STP60NF03L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.41Is Samacsys:N
其他特性:LOW THRESHOLD雪崩能效等级(Eas):650 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):60 A最大漏源导通电阻:0.015 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP60NF03L 数据手册

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STP60NF03L  
N-CHANNEL 30V - 0.008  
- 60A TO-220  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP60NF03L  
30 V  
< 0.010 Ω  
60 A  
TYPICAL RDS(on) = 0.008 Ω  
LOW THRESHOLD DRIVE  
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalance  
characteristics and less critical alignment steps  
3
2
1
TO-220  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc. )  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
30  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
30  
V
20  
V
±
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
60  
A
ID  
42  
240  
A
I
DM()  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
100  
W
Derating Factor  
0.67  
W/oC  
mJ  
oC  
oC  
EAS(1  
Tstg  
Tj  
)
Single Pulse Avalanche Energy  
Storage Temperature  
650  
-65 to 175  
175  
(1) starting Tj = 25oC, ID = 30A , VDD = 20V  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
September 1999  

STP60NF03L 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

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