Datasheet > STP62NS04Z_06

STP62NS04Z_06

更新时间： 2024-09-27 02:57:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	268K
描述
N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET

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STP62NS04Z_06 数据手册

STP62NS04Z

N-channel clamped 12.5mΩ - 62A - TO-220

Fully protected MESH OVERLAY™ Power MOSFET

General features

V_DSS

(@Tjmax)

Type

R_DS(on)

I_D

STP62NS04Z

Clamped

<0.015Ω

62A

■ 100% avalanche tested

■ Low capacitance and gate charge

TO-220

■ 175°C maximum junction temperature

Description

This fully clamped MOSFET is produced by using

the latest advanced Company’s Mesh Overlay

process which is based on a novel strip layout.

The inherent benefits of the new technology

coupled with the extra clamping capabilities make

this product particularly suitable for the harshest

operation conditions such as those encountered

in the automotive environment. Any other

application requiring extra ruggedness is also

recommended.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STP62NS04Z

P62NS04Z

TO-220

Tube

October 2006

Rev 5

1/12

www.st.com

12 3 4 5 6 7...12

中文翻译

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