Datasheet > STP6635GH

STP6635GH

更新时间： 2024-09-28 17:15:55

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

STP6635GH 数据手册

STP6635GH

P Channel Enhancement Mode MOSFET

40.0A

ꢀ

DESCRIPTION

STP6635GH is the PꢀChannel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. The STP413D has

been designed specially to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM controllers. It has been optimized

for low gate charge, low R

and fast switching speed.

DS(ON)

FEATURE

PIN CONFIGURATION (D-PAK)

ꢀ

ꢀ30V/ꢀ26.0A, R_DS(ON)= 20mꢁ

@V^GS= ꢀ10V

ꢀ30V/ꢀ16.0A, R_DS(ON)= 36mꢁ

@VGS =ꢀ4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢀresistance and

maximum DC current capability

TOꢀ252 package design

TO-252

TO-251

PART MARKING

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP6635GH 2009. V1

12 3 4 5 6 7 8

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
STP6A60	SEMIWELL	获取价格	Bi-Directional Triode Thyristor
STP6LNC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP
STP6LNC60FP	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP
STP6N120K3	STMICROELECTRONICS	获取价格	N-channel 1200 V, 1.95 Î© typ., 6 A SuperMESH
STP6N25	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STP6N25FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STP6N50	STMICROELECTRONICS	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N50FI	STMICROELECTRONICS	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N60FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET，