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STP6506

更新时间： 2024-09-28 17:15:47

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STP6506 数据手册

STP6506

Dual P Channel Enhancement Mode MOSFET

ꢀ2.8A

DESCRIPTION

The STC6506 is the dual P-Channel enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density process is

especially tailored to minimize on-state resistance and provide superior switching

performance. These devices are particularly suited for low voltage application, such as

notebook computer power management and other battery powered circuits where high-side

switching, low in-line power loss, and resistance to transients are needed.

FEATURE

PIN CONFIGURATION

TSOP-6

◆ ꢀ30V/ꢀ2.8A, RDS(ON)=105mohm@VGS=ꢀ10V

◆ ꢀ30V/ꢀ2.5A, RDS(ON)=135mohm@VGS=ꢀ4.5V

◆ Super high density cell design for extremely

S1 D2

low RDS(ON)

◆ Exceptional anꢀresistance and maximum DC

current capability

◆ TSOPꢀ6P package design

06YW

S2 G2

Y: Year

A: Produces Code

pꢀchannel

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP6506 2010. V1

12 3 4 5 6

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