Datasheet > STP6623

STP6623

更新时间： 2024-09-28 17:15:23

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

STP6623 数据手册

STP6623

P Channel Enhancement Mode MOSFET

ꢀ18.0A

SCRIPTION

STP6621 is the PꢀChannel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize onꢀstate resistance. These devices are

particularly suited for low voltage application, noteook power management ane ther

battery powered circuits where highꢀside witching.

FEATURE

PIN CONFIGURATION

SOP-8

ꢀ

ꢀ60V/ꢀ10.0A, R_DS(ON)= 23mꢁ (Typ.)

@VGS =ꢀ10V

ꢀ60V/ꢀ8.0A, R_DS(ON)= 28mꢁ

@VGS = ꢀ4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢀresistance and maximum

DC current capability

SOPꢀ8 package design

PART MARKING

SOP-8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP6623 2010. V1

12 3 4 5 6

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
STP6625	STANSON	获取价格	SOP-8P
STP6635GH	STANSON	获取价格	TO-251/TO-252
STP6A60	SEMIWELL	获取价格	Bi-Directional Triode Thyristor
STP6LNC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP
STP6LNC60FP	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP
STP6N120K3	STMICROELECTRONICS	获取价格	N-channel 1200 V, 1.95 Î© typ., 6 A SuperMESH
STP6N25	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STP6N25FI	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STP6N50	STMICROELECTRONICS	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP6N50FI	STMICROELECTRONICS	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR