Datasheet > STP6625

STP6625

更新时间： 2024-09-28 17:15:15

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STP6625 数据手册

STP6625

P Channel Enhancement Mode MOSFET

-5.0A

SCRIPTION

STP6625 is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application, noteook power management ane ther

battery powered circuits where high-side witching.

PIN CONFIGURATION

SOP-8

FEATURE

-60V/-5.0A, R_DS(ON)= 60mΩ (Typ.)

@VGS =-10

-60V/-3.0A, R_DS(ON)= 85mΩ

@VGS = -4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

PART MARKING

SOP-8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP6625 2010.

12 3 4 5 6 7

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