Datasheet > STP6308

STP6308

更新时间： 2024-09-27 12:22:55

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	420K
描述
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STP6308 数据手册

STP6308

Dual P Channel Enhancement Mode MOSFET

-1.0A

DESCRIPTION

STP6308 is the dual P-Channel enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance and provide superior switching

performance. These devices are particularly suited for low voltage applications such as

notebook computer circuits where high-side switching, low in-line power loss and

resistance to transients are needed.

FEATURE

PIN CONFIGURATION

SOT-363 / SC70-6L

�

-20V/1.0A, R_DS(ON)= 520mΩ@VGS =4.5V

-20V/0.8A, R_DS(ON)=700mΩ@VGS =2.5V

-20V/0.7A, R_DS(ON)=950mΩ@VGS =1.8V

Super high density cell design for extremely

low R_DS(ON)

D1 G2 S2

�

Exceptional low on-resistance and maximum

DC current capability

SOT-363 / SC70-6L package design

08YW

Y: Year

A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STP6308

SOT-363 / SC70-6L

※ Process Code : A ~ Z(1~26) ; a ~ z(27~52)

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP6308 2009. V1

12 3 4 5 6

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