Datasheet > STP65N045M9

STP65N045M9

更新时间： 2023-12-20 18:46:34

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	412K
描述
N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package

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STP65N045M9 数据手册

STP65N045M9

Datasheet

N-channel 650 V, 39 mΩ typ., 54 A MDmesh M9 Power MOSFET

in a TO-220 package

Features

DS(on)

max.

Order code

TAB

STP65N045M9

650 V

45 mΩ

54A

•

Worldwide best FOM R_DS(on)*Q_gamong silicon-based devices

Higher V_DSSrating

TO-220

Higher dv/dt capability

Excellent switching performance

Easy to drive

D(2, TAB)

100% avalanche tested

Applications

•

High efficiency switching applications

G(1)

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low R_DS(on)per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values, among

all silicon based fast switching super-junction Power MOSFETs, making it particularly

suitable for applications that require superior power density and outstanding

efficiency.

S(3)

AM01475v1_noZen

Product status link

STP65N045M9

Product summary

Order code

STP65N045M9

Marking

Package

Packing

65N045M9

TO-220

Tube

DS13506 - Rev 5 - September 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

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