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STP60NE10FP PDF预览

STP60NE10FP

更新时间: 2024-11-22 22:50:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 111K
描述
N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET

STP60NE10FP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220FP, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
雪崩能效等级(Eas):100 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP60NE10FP 数据手册

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STP60NE10  
STP60NE10FP  
N - CHANNEL 100V - 0.016- 60A TO-220/TO-220FP  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP60NE10  
STP60NE10FP  
100 V  
100 V  
< 0.022 Ω  
< 0.022 Ω  
60 A  
30 A  
TYPICAL RDS(on) = 0.016 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
3
2
2
DESCRIPTION  
1
1
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP60NE10 STP60NE10FP  
Unit  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
100  
100  
V
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
60  
42  
30  
21  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
IDM( ) Drain Current (pulsed)  
240  
160  
1.06  
120  
50  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
Derating Factor  
W
W/oC  
0.37  
2000  
VISO  
dv/dt  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Peak Diode Recovery voltage slope  
Storage Temperature  
V
7
V/ns  
oC  
oC  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 60 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/9  
May 1999  

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