是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
雪崩能效等级(Eas): | 150 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 16 A |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.16 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 90 W |
最大脉冲漏极电流 (IDM): | 64 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP16N65M2 | STMICROELECTRONICS |
获取价格 |
N沟道650 V、0.32 Ohm典型值、11 A MDmesh M2功率MOSFET,T | |
STP16N65M5 | STMICROELECTRONICS |
获取价格 |
N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK | |
STP16N80K5 | STMICROELECTRONICS |
获取价格 |
Power Field-Effect Transistor | |
STP16NB25 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 250V - 0.220ohm - 16A - TO-220/TO-220FP PowerMESH MOSFET | |
STP16NB25FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 250V - 0.220ohm - 16A - TO-220/TO-220FP PowerMESH MOSFET | |
STP16NE06 | STMICROELECTRONICS |
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N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET | |
STP16NE06FI | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-220 | |
STP16NE06FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET | |
STP16NE06L | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET | |
STP16NE06L/FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET |