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STI11NM60ND PDF预览

STI11NM60ND

更新时间: 2024-11-09 09:00:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 753K
描述
N-channel 600 V, 0.37 Ω, 10 A, FDmesh? II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

STI11NM60ND 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknown风险等级:5.84
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STI11NM60ND 数据手册

 浏览型号STI11NM60ND的Datasheet PDF文件第2页浏览型号STI11NM60ND的Datasheet PDF文件第3页浏览型号STI11NM60ND的Datasheet PDF文件第4页浏览型号STI11NM60ND的Datasheet PDF文件第5页浏览型号STI11NM60ND的Datasheet PDF文件第6页浏览型号STI11NM60ND的Datasheet PDF文件第7页 
STD11NM60ND, STF/I11NM60ND  
STP11NM60ND, STU11NM60ND  
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET  
I2PAK, TO-220, TO-220FP, IPAK, DPAK  
Features  
Order codes VDSS (@Tjmax) RDS(on) max  
ID  
3
3
2
STD11NM60ND  
STF11NM60ND  
STI11NM60ND  
STP11NM60ND  
STU11NM60ND  
10 A  
10 A(1)  
10 A  
1
1
DPAK  
PAK  
650 V  
< 0.45 Ω  
3
2
10 A  
1
10 A  
IPAK  
1. Limited only by maximum temperature allowed  
3
3
2
2
The worldwide best R  
* area amongst the  
1
1
DS(on)  
fast recovery diode devices  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Extremely high dv/dt and avalanche  
capabilities  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
$ꢅꢆꢇ  
Description  
The device is an N-channel FDmesh™ II Power  
MOSFET that belongs to the second generation  
of MDmesh™ technology. This revolutionary  
Power MOSFET associates a new vertical  
structure to the company's strip layout and  
associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in particular  
ZVS phase-shift converters.  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD11NM60ND  
STF11NM60ND  
STI11NM60ND  
STP11NM60ND  
STU11NM60ND  
Tape and reel  
Tube  
TO-220FP  
I2PAK  
11NM60ND  
Tube  
TO-220  
IPAK  
Tube  
Tube  
October 2010  
Doc ID 14625 Rev 2  
1/19  
www.st.com  
19  

STI11NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STB11NM60 STMICROELECTRONICS

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STD11NM60ND STMICROELECTRONICS

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STB11NM60T4 STMICROELECTRONICS

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N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

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