STI14NM65N

更新时间： 2024-09-17 06:14:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	550K
描述
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

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中文翻译

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数据手册
替代型号

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STI14NM65N 数据手册

STB14NM65N, STF14NM65N

STI14NM65N,STP14NM65N,STW14NM65N

N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET

TO-220, TO-220FP, D²PAK, I²PAK, TO-247

Features

V_DSS

(@T_Jmax)

R_DS(on)

max

Type

I_D

STI14NM65N

STB14NM65N

STF14NM65N

STP14NM65N

STW14NM65N

710 V

< 0.38 Ω

12 A

12 A⁽¹⁾

I²PAK

TO-220

12 A

D²PAK

12 A

1. Limited only by maximum temperature allowed

TO-220FP

TO-247

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Figure 1.

Internal schematic diagram

Application

■ Switching applications

Description

This series of devices is designed using the

second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a

new vertical structure to the Company’s strip

layout to yield one of the world’s lowest on-

resistance and gate charge. It is therefore suitable

for the most demanding high efficiency

converters.

Table 1.

Order codes

STI14NM65N

Device summary

Marking

Package

Packaging

14NM65N

I²PAK

Tube

Tape and reel

Tube

STB14NM65N

STF14NM65N

STP14NM65N

STW14NM65N

D²PAK

TO-220FP

TO-220

Tube

TO-247

Tube

October 2008

Rev 2

1/18

www.st.com

12 3 4 5 6 7...18

中文翻译

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STI14NM65N 替代型号

型号	品牌	替代类型	描述	数据表
STP11NM65N	STMICROELECTRONICS	功能相似	N-channel 650 V, 0.425 Î© typ., 11 A MDmeshâ
STP14NM65N	STMICROELECTRONICS	功能相似	N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Powe
STB14NM65N	STMICROELECTRONICS	功能相似	N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Powe

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