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STI15NM65N PDF预览

STI15NM65N

更新时间: 2024-11-23 03:30:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 500K
描述
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET

STI15NM65N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliant风险等级:5.82
其他特性:AVALANCHE RATED雪崩能效等级(Eas):400 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (Abs) (ID):15.5 A最大漏极电流 (ID):15.5 A
最大漏源导通电阻:0.27 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):62 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STI15NM65N 数据手册

 浏览型号STI15NM65N的Datasheet PDF文件第2页浏览型号STI15NM65N的Datasheet PDF文件第3页浏览型号STI15NM65N的Datasheet PDF文件第4页浏览型号STI15NM65N的Datasheet PDF文件第5页浏览型号STI15NM65N的Datasheet PDF文件第6页浏览型号STI15NM65N的Datasheet PDF文件第7页 
STF15NM65N-STI15NM65N-STW15NM65N  
STB15NM65N-STP15NM65N  
N-channel 650V - 0.25- 15.5A - TO-220/FP - D2/I2PAK - TO-247  
Second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax)  
Type  
R
DS(on) Max  
ID  
3
2
3
1
2
1
STB15NM65N  
STF15NM65N  
STI15NM65N  
STP15NM65N  
STW15NM65N  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.27  
< 0.27 Ω  
< 0.27 Ω  
< 0.27 Ω  
< 0.27 Ω  
15.5 A  
15.5 A(1)  
15.5 A  
PAK  
TO-220  
3
2
1
15.5 A  
TO-220FP  
15.5 A  
3
1. Limited only by maximum temperature allowed  
1
3
2
1
100% avalanche tested  
PAK  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices implements the second  
generation of MDmesh™ Technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the Company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STI15NM65N  
STF15NM65N  
STP15NM65N  
15NM65N  
15NM65N  
15NM65N  
15NM65N  
15NM65N  
Tube  
Tube  
TO-220FP  
TO-220  
PAK  
Tube  
STB15NM65NT4  
STW15NM65N  
Tape & reel  
Tube  
TO-247  
September 2007  
Rev 1  
1/18  
www.st.com  
18  

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