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STI15NM60ND PDF预览

STI15NM60ND

更新时间: 2024-09-17 06:14:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
19页 601K
描述
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

STI15NM60ND 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-262AA包装说明:ROHS COMPLIANT, TO-262, I2PAK-3
针数:3Reach Compliance Code:not_compliant
风险等级:5.76雪崩能效等级(Eas):300 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.299 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):56 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STI15NM60ND 数据手册

 浏览型号STI15NM60ND的Datasheet PDF文件第2页浏览型号STI15NM60ND的Datasheet PDF文件第3页浏览型号STI15NM60ND的Datasheet PDF文件第4页浏览型号STI15NM60ND的Datasheet PDF文件第5页浏览型号STI15NM60ND的Datasheet PDF文件第6页浏览型号STI15NM60ND的Datasheet PDF文件第7页 
STB15NM60ND - STF/I15NM60ND  
STP15NM60ND - STW15NM60ND  
N-channel 600 V - 0.27 - 14 A - FDmesh™ II Power MOSFET  
D2PAK, I2PAK, TO-220, TO-220FP, TO-247  
Features  
Type  
VDSS (@Tjmax)RDS(on) max  
ID  
3
3
2
STB15NM60ND  
STF15NM60ND  
STI15NM60ND  
STP15NM60ND  
STW15NM60ND  
14 A  
14 A  
1
1
D2PAK  
PAK  
650 V  
0.299 14 A(1)  
3
2
1
14 A  
14 A  
TO-247  
1. Limited only by maximum temperature allowed  
3
3
2
2
The worldwide best R  
* area amongst the  
1
1
DS(on)  
fast recovery diode devices  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.Strongly recommended for  
bridge topologies, in ZVS phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
D2PAK  
Packaging  
STB15NM60ND  
STF15NM60ND  
STI15NM60ND  
STP15NM60ND  
STW15NM60ND  
15NM60ND  
15NM60ND  
15NM60ND  
15NM60ND  
15NM60ND  
Tape and reel  
Tube  
TO-220FP  
I2PAK  
Tube  
TO-220  
TO-247  
Tube  
Tube  
April 2008  
Rev 2  
1/19  
www.st.com  
19  

STI15NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STI15NM60N STMICROELECTRONICS

类似代替

N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO
STB15NM60ND STMICROELECTRONICS

功能相似

N-channel 600 V - 0.27 Ω - 14 A - FDmesh? II
STF21NM60ND STMICROELECTRONICS

功能相似

N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Powe

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