品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
16页 | 311K | |
描述 | ||
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGP20H65FB2 | STMICROELECTRONICS |
获取价格 |
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package | |
STGP20IH65DF | STMICROELECTRONICS |
获取价格 |
Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-220 package | |
STGP20M65DF2 | STMICROELECTRONICS |
获取价格 |
沟槽栅场截止IGBT,M系列,650 V、20 A,低损耗 | |
STGP20NB37LZ | STMICROELECTRONICS |
获取价格 |
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT | |
STGP20NB60H | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT | |
STGP20NB60K | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT | |
STGP20NC60V | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT | |
STGP20V60DF | STMICROELECTRONICS |
获取价格 |
600 V、20 A超高速沟槽栅场截止V系列IGBT | |
STGP30H60DF | STMICROELECTRONICS |
获取价格 |
600 V、30 A高速沟槽栅场截止IGBT | |
STGP30H60DFB | STMICROELECTRONICS |
获取价格 |
600 V、30 A高速沟槽栅场截止HB系列IGBT |