Datasheet > STGP15M65DF2

STGP15M65DF2

更新时间： 2024-09-25 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	931K
描述
650 V、15 A沟槽栅场截止低损耗M系列IGBT

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中文翻译

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技术参数
数据手册

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STGP15M65DF2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	30 weeks	风险等级：	1.51
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STGP15M65DF2 数据手册

STGP15M65DF2

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss

in a TO-220 package

Datasheet - production data

Features



6 μs of short-circuit withstand time

V_CE(sat)= 1.55 V (typ.) @ I_C= 15 A

Tight parameter distribution

Safer paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

TAB

Soft and very fast recovery antiparallel diode

Maximum junction temperature: T_J= 175 °C

TO-220

Applications



Motor control

UPS

PFC

Figure 1: Internal schematic diagram

General purpose inverter

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGP15M65DF2

G15M65DF2

TO-220

Tube

May 2017

DocID028489 Rev 4

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

中文翻译

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