品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
22页 | 621K | |
描述 | ||
Galvanically isolated 4 A single gate driver for SiC MOSFETs |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGAP2SICSAN | STMICROELECTRONICS |
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Galvanically isolated 4 A single gate driver for SiC MOSFETs | |
STGAP2SICSN | STMICROELECTRONICS |
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Galvanically isolated 4 A single gate driver for SiC MOSFETs | |
STGAP4S | STMICROELECTRONICS |
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Automotive advanced isolated gate driver for IGBTs and SiC MOSFETs | |
STGB10H60DF | STMICROELECTRONICS |
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600 V、10 A高速沟槽栅场截止H系列IGBT | |
STGB10HF60KDT4 | STMICROELECTRONICS |
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20A, 600V, N-CHANNEL IGBT, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | |
STGB10M65DF2 | STMICROELECTRONICS |
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沟槽栅场截止IGBT,M系列,650 V、10 A,低损耗 | |
STGB10N60L | STMICROELECTRONICS |
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N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT | |
STGB10NB37LZ | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT | |
STGB10NB37LZ_01 | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT | |
STGB10NB37LZT4 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 20A I(C) | TO-263AB |