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STD7NS20 PDF预览

STD7NS20

更新时间: 2024-09-26 22:23:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 322K
描述
N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET

STD7NS20 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:TO-252, DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.42
雪崩能效等级(Eas):60 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON

STD7NS20 数据手册

 浏览型号STD7NS20的Datasheet PDF文件第2页浏览型号STD7NS20的Datasheet PDF文件第3页浏览型号STD7NS20的Datasheet PDF文件第4页浏览型号STD7NS20的Datasheet PDF文件第5页浏览型号STD7NS20的Datasheet PDF文件第6页浏览型号STD7NS20的Datasheet PDF文件第7页 
STD7NS20  
STD7NS20-1  
N-CHANNEL 200V - 0.35- 7A DPAK / IPAK  
MESH OVERLAY™ MOSFET  
PRELIMINARY DATA  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD7NS20  
STD7NS20-1  
200 V  
200 V  
< 0.40 Ω  
< 0.40 Ω  
7 A  
7 A  
TYPICAL R (on) = 0.35 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
3
3
2
1
1
DPAK  
IPAK  
TO-252  
TO-251  
DESCRIPTION  
Using the latest high voltage MESH OVERLAY™  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstanding  
performance. The new patented STrip layout cou-  
pled with the Company’s proprietary edge termina-  
tion structure, makes it suitable in coverters for  
lighting applications.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-DC CONVERTERS FOR TELECOM,  
INDUSTRIAL, AND LIGHTING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
200  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
200  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
7
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
4.4  
A
D
C
I
( )  
Drain Current (pulsed)  
28  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
45  
W
C
Derating Factor  
0.37  
5
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(1) I 7A, di/dt300 A/µs, V V  
, TjT  
jMAX  
SD  
DD  
(BR)DSS  
(•)Pulse width limited by safe operating area  
June 2003  
1/8  

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