Datasheet > STD5N20T4

STD5N20T4

更新时间： 2024-09-11 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	90K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-252

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STD5N20T4 数据手册

STD5N20

Ω - 5A DPAK

N-CHANNEL 200V - 0.6

MESH OVERLAY MOSFET

TYPE

STD5N20

DSS

DS(on)

200 V

< 0.8 Ω

5 A

■

TYPICAL R (on) = 0.6 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

ADD SUFFIX “T4” FOR OREDERING IN TAPE &

REEL

DPAK

TO-252

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

200

Drain-gate Voltage (R = 20 kΩ)

200

DGR

Gate- source Voltage

±20

Drain Current (continuous) at T = 25°C

3.5

Drain Current (continuous) at T = 100°C

(l )

Drain Current (pulsed)

Total Dissipation at T = 25°C

TOT

Derating Factor

0.36

W/°C

V/ns

°C

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

150

Max. Operating Junction Temperature

(1)I ≤5A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

(•)Pulse width limited by safe operating area

(**) Limited only by Maximum Temperature Allowed

December 2000

1/8

12 3 4 5 6 7 8

中文翻译

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