Datasheet > 晶体管 > 功率场效应晶体管> STD25P03LT4G

STD25P03LT4G

更新时间： 2024-11-21 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管功率场效应晶体管
页数	文件大小	规格书
9页	160K
描述
单 P 沟道，逻辑电平，MOSFET，-30V，-25A，72mΩ

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中文翻译

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数据手册
替代型号

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STD25P03LT4G 数据手册

NTD25P03L

Power MOSFET

−25 Amp, −30 Volt

Logic Level P−Channel DPAK

Designed for low voltage, high speed switching applications and to

withstand high energy in the avalanche and commutation modes. The

source−to−drain diode recovery time is comparable to a discrete fast

recovery diode.

http://onsemi.com

Typ

I Max

(BR)DSS

DS(on)

−30 V

51 mW @ 5.0 V

−25 A

Features

• Pb−Free Packages are Available

P−Channel

Typical Applications

• PWM Motor Controls

• Power Supplies

• Converters

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

DSS

−30

Gate−to−Source Voltage

− Continuous

Drain

GSM

"15

"20

− Non−Repetitive (tp ≤ 10 ms)

Vpk

DPAK

CASE 369C

STYLE 2

Drain Current

− Continuous @ T = 25°C

−25

−75

Apk

− Single Pulse (t ≤ 10 ms)

Total Power Dissipation @ T = 25°C

Gate

Drain

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Source

Single Pulse Drain−to−Source Avalanche

200

°C/W

°C

Energy − Starting T = 25°C

Drain

(V = 25 Vdc, V = 5.0 Vdc,

Peak I = 20 Apk, L = 1.0 mH, R = 25 W)

DPAK−3

CASE 369D

STYLE 2

Thermal Resistance

− Junction−to−Case

1.65

120

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, (1/8 in from case for 10 seconds)

260

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using the minimum recommended

pad size.

Gate Drain Source

= Year

= Work Week

= Device Code

= Pb−Free Package

25P03L

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Publication Order Number:

March, 2006 − Rev. 3

NTD25P03L/D

12 3 4 5 6 7...9

中文翻译

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STD25P03LT4G 替代型号

型号	品牌	替代类型	描述	数据表
NTD25P03LT4G	ONSEMI	类似代替	Power MOSFET -25 Amp, -30 Volt
NTD25P03LRLG	ONSEMI	类似代替	Power MOSFET -25 Amp, -30 Volt
NTD25P03LG	ONSEMI	类似代替	Power MOSFET

与STD25P03LT4G相关器件

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STD2640NL	SAMHOP	获取价格	N-Channel E nhancement Mode Field Effect Transistor
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STD26P3LLH6	STMICROELECTRONICS	获取价格	P沟道30 V、0.024 Ohm典型值、12 A STripFET(TM) VI Dee
STD27	SIRECT	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD27	SIRECTIFIER	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD27GK08	SIRECT	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD27GK08	SIRECTIFIER	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD27GK12	SIRECTIFIER	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD27GK12	SIRECT	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules
STD27GK14	SIRECT	获取价格	Thyristor-Diode Modules, Diode-Thyristor Modules

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