是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-251AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 12 weeks |
风险等级: | 1.7 | 雪崩能效等级(Eas): | 120 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 2 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 4.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 45 W | 最大脉冲漏极电流 (IDM): | 8 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
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N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220 | |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD2N105K5 | STMICROELECTRONICS |
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N沟道1050 V、6 Ohm典型值、1.5 A MDmesh K5功率MOSFET,DP | |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STD2N50-1 | STMICROELECTRONICS |
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STD2N50-1 I-PAK MOSFET-TRANSIT | |
STD2N50T4 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 | |
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N沟道950 V、4.2 Ohm典型值、2 A MDmesh K5功率MOSFET,DPA | |
STD2NA50 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STD2NA50-1 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-251 | |
STD2NA50T4 | ETC |
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OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | |
STD2NA60 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STD2NA60-1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-251 |