Datasheet > STD2NB80

STD2NB80

更新时间： 2024-11-23 22:29:07

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	94K
描述
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET

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STD2NB80 数据手册

STD2NB80

N - CHANNEL 800V - 4.6

Ω

- 1.9A - IPAK/DPAK

PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STD2NB80

800 V

< 6.5 Ω

1.9 A

■

TYPICAL R_DS(on)= 4.6 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL (2500 UNITS)

DESCRIPTION

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R_DS(on)per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE POWER SUPPLIES(SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

■

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

800

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 k

Gate-source Voltage

800

)

Ω

± 30

1.9

Drain Current (continuous) at T_c= 25 ^oC

I_D

Drain Current (continuous) at T_c= 100 C

1.2

_DM(• )

Drain Current (pulsed)

7.6

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.44

4.5

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 150

T_j

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

( 1) I_SD≤ 2A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/9

January 1999

12 3 4 5 6 7...9

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与STD2NB80相关器件

型号	品牌	获取价格	描述	数据表
STD2NB80-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 1.9A I(D) \| TO-251AA
STD2NB80T4	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 1.9A I(D) \| TO-252AA
STD2NC40	STMICROELECTRONICS	获取价格	N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC40-1	STMICROELECTRONICS	获取价格	N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET
STD2NC45-1	STMICROELECTRONICS	获取价格	N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92
STD2NC45-1_06	STMICROELECTRONICS	获取价格	N-channel 450V - 4.1ヘ - 1.5A - IPAK - TO-92 S
STD2NC45-1_09	STMICROELECTRONICS	获取价格	N-channel 450 V, 4.1 Ω, 1.5 A, IPAK SuperMESH
STD2NC45T4	ETC	获取价格	N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
STD2NC50	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerM
STD2NC50-1	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerM