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STD2N105K5 PDF预览

STD2N105K5

更新时间: 2024-11-21 14:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 1356K
描述
N沟道1050 V、6 Ohm典型值、1.5 A MDmesh K5功率MOSFET,DPAK封装

STD2N105K5 数据手册

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STD2N105K5  
Datasheet  
N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFET  
in a DPAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
3
2
STD2N105K5  
1050 V  
8 Ω  
1.5 A  
1
Industry’s lowest RDS(on) x area  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
DPAK  
D(2, TAB)  
100% avalanche tested  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
Description  
AM01476v1_tab  
This very high voltage N-channel Power MOSFET is designed using MDmesh K5  
technology based on an innovative proprietary vertical structure. The result is a  
dramatic reduction in on-resistance and ultra-low gate charge for applications  
requiring superior power density and high efficiency.  
Product status link  
STD2N105K5  
Product summary  
Order code  
STD2N105K5  
Marking  
Package  
Packing  
2N105K5  
DPAK  
Tape and reel  
DS10323 - Rev 4 - June 2023  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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