Datasheet > STD29NF03LT4

STD29NF03LT4

更新时间： 2024-11-19 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	175K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 29A I(D) \| TO-252AA

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数据手册

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STD29NF03LT4 数据手册

STD29NF03L

- 29A IPAK/DPAK

N-CHANNEL 30V - 0.015

Ω

LOW GATE CHARGE STripFET II POWER MOSFET

DS(on)

TYPE

DSS

STD29NF03L

30V

<0.020Ω

29A

■

TYPICAL R (on) = 0.015Ω

OPTIMAL R

x Qg TRADE-OFF

DS(on)

CONDUCTION LOSSES REDUCED

SWITCHING LOSSES REDUCED

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4”)

IPAK

DPAK

TO-252

(Suffix “T4”)

■

TO-251

(Suffix “-1”)

DESCRIPTION

This application specific Power MOSFET shows the best

trade-off between on-resistance and gate charge. When

used as high and low side in buck regulators, it give the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high efficiency

are of paramount importance.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 18

I (•)

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(• •)

Drain Current (pulsed)

116

Total Dissipation at T = 25°C

tot

Derating Factor

0.3

120

W/°C

(1)

Single Pulse Avalanche Energy

Storage Temperature

stg

-55 to 175

°C

Max. Operating Junction Temperature

(•) Current limited by the package

(1) Starting T = 25 C, I = 15 A, V = 15 V

(••) Pulse width limited by safe operating area.

February 2002

1/10

12 3 4 5 6 7...10

中文翻译

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