Datasheet > STD26P3LLH6

STD26P3LLH6

更新时间： 2024-11-21 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	982K
描述
P沟道30 V、0.024 Ohm典型值、12 A STripFET(TM) VI DeepGATE功率MOSFET，DPAK封装

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STD26P3LLH6 数据手册

STD26P3LLH6

P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™

Power MOSFET in a DPAK package

Datasheet

production data

Features

R_DS(on)

max

Order code

V_DSS

I_D

P_TOT

TAB

STD26P3LLH6 30 V 0.030 Ω⁽¹⁾12 A

40 W

1. @ V = 10 V

• R_DS(on)* Q_gindustry benchmark

• Extremely low on-resistance R_DS(on)

• High avalanche ruggedness

• Low gate input resistance

DPAK

Applications

Figure 1. Internal schematic diagram

• Switching applications

D(2 or TAB)

• LCC converters, resonant converters

Description

This device is a P-channel Power MOSFET

developed using the 6^thgeneration of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R_DS(on)in all packages

G(1)

S(3)

AM11258v1

Table 1. Device summary

Order code

Marking

Package

DPAK

Packaging

STD26P3LLH6

26P3LLH6

Tape and reel

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

February 2014

DocID023574 Rev 5

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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