Datasheet > STD130N6F7

STD130N6F7

更新时间： 2024-11-28 14:57:47

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	672K
描述
N沟道60 V、4.2 mOhm典型值、80 A STripFET F7功率MOSFET，DPAK封装

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STD130N6F7 数据手册

STD130N6F7

N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7

Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

P_TOT

STD130N6F7 60 V

5.0 mΩ

80 A 134 W



Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Figure 1: Internal schematic diagram

Applications



Switching applications

D(2, TAB)

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

G(1)

S(3)

AM01475v1_Tab

Table 1: Device summary

Order code

Marking

130N6F7

Package

Packing

STD130N6F7

DPAK

Tape and reel

October 2016

DocID028788 Rev 2

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

中文翻译

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