Datasheet > STD13N60M6

STD13N60M6

更新时间： 2024-11-08 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	521K
描述
N-channel 600 V, 320 mOhm typ., 10 A MDmesh M6 Power MOSFET in a DPAK package

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STD13N60M6 数据手册

STD13N60M6

Datasheet

N-channel 600 V, 320 mΩ typ., 10 A, MDmesh M6 Power MOSFET

in a DPAK package

Features

DS(on)

max.

TOT

Order code

TAB

STD13N60M6

600 V

380 mΩ

10 A

92 W

•

Reduced switching losses

DPAK

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

D(2, TAB)

Zener-protected

G(1)

Applications

•

Switching applications

LLC converters

Boost PFC converters

S(3)

AM01475V1

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STD13N60M6

Product summary

Order code

STD13N60M6

Marking

Package

Packing

13N60M6

DPAK

Tape and reel

DS13028 - Rev 1 - October 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...16

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