Datasheet > STD134N4F7AG

STD134N4F7AG

更新时间： 2024-09-18 14:58:07

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描述
汽车级N沟道40 V、2.5 mOhm典型值、80 A STripFET F7功率MOSFET，DPAK封装

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STD134N4F7AG 数据手册

STD134N4F7AG

Automotive-grade N-channel 40 V, 2.5 mΩ typ., 80 A

STripFET™ F7 Power MOSFET in a DPAK package

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

STD134N4F7AG 40 V

3.5 mΩ

80 A

134 W



AEC-Q101 qualified

Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Figure 1: Internal schematic diagram

Applications

D(2, TAB)



Switching applications

Description

This N-channel Power MOSFET utilizes

G(1)

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low

on-state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

S(3)

AM01475v1_Tab

Table 1: Device summary

Order code

Marking

Package

DPAK

Packing

STD134N4F7AG

134N4F7

Tape and reel

December 2016

DocID030109 Rev 1

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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