Datasheet > STD13N60DM2

STD13N60DM2

更新时间： 2024-11-08 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	497K
描述
N沟道600 V、0.310 Ohm典型值、11 A MDmesh DM2功率MOSFET，DPAK封装

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技术参数
数据手册

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STD13N60DM2 技术参数

生命周期：	Active	Reach Compliance Code：	not_compliant
Factory Lead Time：	17 weeks	风险等级：	1.57
Samacsys Description：	MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package

STD13N60DM2 数据手册

STD13N60DM2

Datasheet

N-channel 600 V, 0.310 Ω typ., 11 A MDmesh DM2

Power MOSFET in a DPAK package

Features

TAB

max.

Order codes

STD13N60DM2

DS(on)

600 V

0.365 Ω

11 A

•

Fast-recovery body diode

DPAK

Extremely low gate charge and input capacitance

Low on-resistance

D(2, TAB)

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_tab

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status links

STD13N60DM2

Product summary

Order code

STD13N60DM2

Marking

Package

Packing

13N60DM2

DPAK

Tape and reel

DS11596 - Rev 4 - May 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...17

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与STD13N60DM2相关器件

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STD13N65M2	STMICROELECTRONICS	获取价格	N沟道650 V、0.37 Ohm典型值、10 A MDmesh M2功率MOSFET，D
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STD1408PI	KODENSHI	获取价格	POWER TRANSISTOR
STD140N6F7	STMICROELECTRONICS	获取价格	N沟道60 V、0.0031 Ohm典型值、80 A STripFET F7功率MOSFE
STD14NM50N	STMICROELECTRONICS	获取价格	N-channel 500 V, 0.28 Î© typ., 12 A MDmeshâ¢
STD14NM50NAG	STMICROELECTRONICS	获取价格	汽车级N沟道500 V、0.28 Ohm典型值、12 A MDmesh II功率MOSFE