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STD13N50DM2AG PDF预览

STD13N50DM2AG

更新时间: 2024-11-28 14:58:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 540K
描述
汽车级N沟道500 V、0.299 Ohm典型值、11 A MDmesh DM2功率MOSFET,DPAK封装

STD13N50DM2AG 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:17 weeks
风险等级:5.74峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STD13N50DM2AG 数据手册

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STD13N50DM2AG  
Datasheet  
Automotive-grade N-channel 500 V, 320 mΩ typ., 11 A MDmesh DM2  
Power MOSFET in a DPAK package  
Features  
V
R
max.  
I
D
Order code  
DS  
DS(on )  
TAB  
STD13N50DM2AG  
500 V  
360 mΩ  
11 A  
3
2
1
DPAK  
AEC-Q101 qualified  
Fast-recovery body diode  
Extremely low gate charge and input capacitance  
Low on-resistance  
D(2, TAB)  
100% avalanche tested  
Extremely high dv/dt ruggedness  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
NG1D2TS3Z  
Description  
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-  
recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined  
with low RDS(on), rendering it suitable for the most demanding high-efficiency  
converters and ideal for bridge topologies and ZVS phase-shift converters.  
Product status  
STD13N50DM2AG  
Product summary  
Order code  
Marking  
STD13N50DM2AG  
13N50DM2  
Package  
Packing  
DPAK  
Tape and reel  
DS12210 - Rev 4 - October 2019  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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