是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.8 |
击穿电压标称值: | 220 V | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
极性: | BIDIRECTIONAL | 最大重复峰值反向电压: | 185 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB65D5 | EIC |
获取价格 |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
STB65E0 | EIC |
获取价格 |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
STB65E5 | EIC |
获取价格 |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
STB65G0 | EIC |
获取价格 |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
STB65G4 | EIC |
获取价格 |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
STB6LNC60 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh⑩ | |
STB6LNC60T4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.8A I(D) | TO-263AB | |
STB6N60M2 | STMICROELECTRONICS |
获取价格 |
N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET, | |
STB6N80K5 | STMICROELECTRONICS |
获取价格 |
N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET,D | |
STB6NA60 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |