Datasheet > STB6LNC60T4

STB6LNC60T4

更新时间： 2024-02-02 07:33:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	158K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 5.8A I(D) \| TO-263AB

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STB6LNC60T4 数据手册

STB6LNC60

N-CHANNEL 600V - 1

Ω - 5.8A D PAK

PowerMesh II MOSFET

TYPE

DS(on)

DSS

STB6LNC60

600 V

< 1.25 Ω

5.8 A

■

TYPICAL R (on) = 1.0 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

D PAK

DESCRIPTION

The PowerMESH II is the evolution of the first

generation of MESH OVERLAY . The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns switching speed, gate

charge and ruggedness.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVES

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

600

±30

5.8

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

3.65

23.2

100

0.8

( )

●

Drain Current (pulsed)

Total Dissipation at T = 25°C

TOT

Derating Factor

W/°C

V/ns

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

°C

Max. Operating Junction Temperature

(1)I ≤5.8A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

(•)Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

October 2001

1/9

12 3 4 5 6 7...9

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