Datasheet > STB6NA60-1

STB6NA60-1

更新时间： 2024-11-25 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	132K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 6.5A I(D) \| TO-262VAR

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中文翻译

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数据手册

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STB6NA60-1 数据手册

STB6NA60

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

V_DSS

R_{DS(on )}

< 1.2 Ω

I_D

STB6NA60

600 V

6.5 A

TYPICAL R_DS(on)= 1 Ω

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING D2PACK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX ”T4”)

I2PAK

TO-262

D2PAK

TO-263

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

600

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_DGR

V_GS

I_D

600

± 30

6.5

I_D

4.3

_DM(• )

P_tot

Total Dissipation at T_c= 25 ^oC

125

Derating Factor

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

October 1995

12 3 4 5 6 7...10

中文翻译

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与STB6NA60-1相关器件

型号	品牌	获取价格	描述	数据表
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STB6NA80-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.7A I(D) \| TO-262VAR
STB6NA80T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5.7A I(D) \| TO-263AB
STB6NB50	STMICROELECTRONICS	获取价格	N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
STB6NB50-1	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 5.8A I(D) \| TO-262AA
STB6NB50T4	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 5.8A I(D) \| TO-263AB
STB6NB90	STMICROELECTRONICS	获取价格	N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
STB6NC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2
STB6NC60-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2