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STB6NK60Z-1 PDF预览

STB6NK60Z-1

更新时间: 2024-02-21 20:38:34
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 579K
描述
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET

STB6NK60Z-1 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-262AA包装说明:ROHS COMPLIANT, TO-262, I2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:2.29雪崩能效等级(Eas):210 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):104 W最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB6NK60Z-1 数据手册

 浏览型号STB6NK60Z-1的Datasheet PDF文件第2页浏览型号STB6NK60Z-1的Datasheet PDF文件第3页浏览型号STB6NK60Z-1的Datasheet PDF文件第4页浏览型号STB6NK60Z-1的Datasheet PDF文件第5页浏览型号STB6NK60Z-1的Datasheet PDF文件第6页浏览型号STB6NK60Z-1的Datasheet PDF文件第7页 
STP6NK60Z - STP6NK60ZFP  
STB6NK60Z - STB6NK60Z-1  
N-CHANNEL 600V - 1- 6A TO-220/TO-220FP/D2PAK/I2PAK  
Zener-Protected SuperMESH™Power MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP6NK60Z  
STP6NK60ZFP  
STB6NK60Z  
STB6NK60Z-1  
600 V  
600 V  
600 V  
600 V  
< 1.2  
< 1.2 Ω  
< 1.2 Ω  
< 1.2 Ω  
6 A  
6 A  
6 A  
6 A  
110 W  
32 W  
110 W  
110 W  
3
3
1
TYPICAL R (on) = 1  
DS  
2
1
2
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
D PAK  
TO-220  
TO-220FP  
3
2
1
2
I PAK  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
LIGHTING  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P6NK60Z  
PACKAGE  
PACKAGING  
TUBE  
STP6NK60Z  
STP6NK60ZFP  
STB6NK60ZT4  
TO-220  
P6NK60ZFP  
B6NK60Z  
TO-220FP  
TUBE  
2
TAPE & REEL  
D PAK  
2
STB6NK60Z-1  
B6NK60Z  
TUBE  
I PAK  
April 2003  
1/13  

STB6NK60Z-1 替代型号

型号 品牌 替代类型 描述 数据表
STI13NM60N STMICROELECTRONICS

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N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IP
STB11NM60-1 STMICROELECTRONICS

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N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D
STB10NK60Z-1 STMICROELECTRONICS

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N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2

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