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STB70NH03L PDF预览

STB70NH03L

更新时间: 2024-01-23 01:22:52
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体转换器晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
15页 467K
描述
N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion

STB70NH03L 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N雪崩能效等级(Eas):300 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):60 A最大漏源导通电阻:0.017 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):85 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB70NH03L 数据手册

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STB70NH03L  
N-channel 60V - 0.0075- 70A - D2PAK  
STripFET™ III Power MOSFET for DC-DC conversion  
General features  
Type  
VDSS  
RDS(on)  
ID  
STB70NH03L  
30V  
< 0.00960A (1)  
R  
x Qg industry benchmark  
DS(on)  
Conduction losses reduced  
Switching losses reduced  
Low threshold device  
3
1
PAK  
Description  
The device utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology.  
It is ideal in high performance DC-DC converter  
applications where efficiency is to be achieved at  
very high output currents.  
Internal schematic diagram  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB70NH03LT4  
B70NH03L  
PAK  
Tape & reel  
July 2006  
Rev 6  
1/15  
www.st.com  
15  

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