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STB70NF3LL PDF预览

STB70NF3LL

更新时间: 2024-01-12 19:31:24
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 48K
描述
N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

STB70NF3LL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.19Is Samacsys:N
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):70 A最大漏极电流 (ID):70 A
最大漏源导通电阻:0.0095 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):280 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB70NF3LL 数据手册

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STB70NF3LL  
2
N-CHANNEL 30V - 0.008  
- 70A D PAK  
LOW GATE CHARGE STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STB70NF3LL  
30 V  
< 0.01 Ω  
70 A  
TYPICAL RDS(on) = 0.01 @ 4.5V  
OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V  
CONDUCTION LOSSESREDUCED  
SWITCHING LOSSESREDUCED  
3
DESCRIPTION  
1
This application specific Power Mosfet is the third  
generation of STMicroelectronics unique ”Single  
Feature Size ” strip-based process. The resul-  
ting transistor shows the best trade-off between  
on-resistance and gate charge. When used as  
high and low side in buck regulators, it gives the  
best performance in termsof both conductionand  
switching losses. This is extremely important for  
motherboards where fast switching and high effi-  
ciency are of paramount importance.  
D2PAK  
TO-263  
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLYDESIGNED AND  
OPTIMISED FOR HIGH EFFICIENCY CPU  
CORE DC/DC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
30  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
30  
V
15  
V
±
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
70  
A
ID  
50  
280  
A
I
DM()  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
100  
W
Derating Factor  
0.67  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
May 2000  

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