STB70NF3

更新时间： 2024-11-26 22:20:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅
页数	文件大小	规格书
6页	48K
描述
N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

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STB70NF3 数据手册

STB70NF3LL

N-CHANNEL 30V - 0.008

Ω - 70A D PAK

LOW GATE CHARGE STripFET POWER MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STB70NF3LL

30 V

< 0.01 Ω

70 A

■

TYPICAL R_DS(on)= 0.01 Ω @ 4.5V

OPTIMAL R_DS(on)x Q_gTRADE-OFF @ 4.5V

CONDUCTION LOSSESREDUCED

SWITCHING LOSSESREDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique ”Single

Feature Size ” strip-based process. The resul-

ting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in termsof both conductionand

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

D²PAK

TO-263

ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SPECIFICALLYDESIGNED AND

OPTIMISED FOR HIGH EFFICIENCY CPU

CORE DC/DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

280

_DM(• )

P_tot

Total Dissipation at T_c= 25 C

100

Derating Factor

0.67

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/6

May 2000

12 3 4 5 6

中文翻译

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