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STB6NM60N PDF预览

STB6NM60N

更新时间: 2024-01-08 00:20:16
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
19页 680K
描述
4.6A, 600V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

STB6NM60N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:ROHS COMPLIANT, TO-263, D2PAK-3
针数:4Reach Compliance Code:not_compliant
风险等级:5.82其他特性:AVALANCHE ENERGY RATED
雪崩能效等级(Eas):65 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):4.6 A
最大漏极电流 (ID):4.6 A最大漏源导通电阻:0.92 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):45 W最大脉冲漏极电流 (IDM):18.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB6NM60N 数据手册

 浏览型号STB6NM60N的Datasheet PDF文件第2页浏览型号STB6NM60N的Datasheet PDF文件第3页浏览型号STB6NM60N的Datasheet PDF文件第4页浏览型号STB6NM60N的Datasheet PDF文件第5页浏览型号STB6NM60N的Datasheet PDF文件第6页浏览型号STB6NM60N的Datasheet PDF文件第7页 
STx6NM60N  
N-channel 600 V, 0.85 , 4.6 A MDmesh™ II Power MOSFET  
TO-220, TO-220FP, IPAK, DPAK, D2PAK  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
3
STB6NM60N  
STD6NM60N  
STD6NM60N-1  
STF6NM60N  
STP6NM60N  
650 V  
650 V  
650 V  
650 V  
650 V  
< 0.92 Ω  
< 0.92 Ω  
< 0.92 Ω  
4.6 A  
4.6 A  
4.6 A  
2
2
1
1
TO-220  
TO-220FP  
3
1
< 0.92 4.6 A (1)  
D²P
< 0.92 4.6 A  
3
1
3
2
1
1. Limited only by maximum temperature allowed  
DPAK  
IPAK  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
$ꢅꢆꢇ  
Description  
This series of devices implments second  
generation MDmesh™ technology. This  
'ꢅꢁꢇ  
revolutionary Power MOSFET associates a new  
vertical structure to the STMicroelectronics’ strip  
layout to yield one of the world’s lowest on-  
resistance and gate charge. It is therefore suitable  
fthe most demanding high-efficiency  
converters.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB6NM60N  
STD6NM60N-1  
STD6NM60N  
STF6NM60N  
STP6NM60N  
B6NM60N  
D6NM60N  
D6NM60N  
F6NM60N  
P6NM60N  
PAK  
IPAK  
Tape and reel  
Tube  
DPAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
Tube  
January 2009  
Rev 3  
1/19  
www.st.com  
19  

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