Datasheet > STB6NK60Z_0711

STB6NK60Z_0711

更新时间： 2024-01-21 19:12:40

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	445K
描述
N-channel 600 V - 1 ヘ - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩ Power MOSFET

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中文翻译

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数据手册

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STB6NK60Z_0711 数据手册

STB6NK60Z - STB6NK60Z-1

STP6NK60ZFP - STP6NK60Z

N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D²PAK/I²PAK

Zener-Protected SuperMESH™ Power MOSFET

Features

Type

V_DSS

R_DS(on)I_D

P_W

STB6NK60Z

STB6NK60Z-1

STP6NK60ZFP

STP6NK60Z

600 V

< 1.2 Ω 6 A 110 W

< 1.2 Ω 6 A 30 W

< 1.2 Ω 6 A 110 W

D²PAK

TO-220

I²PAK

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

TO-220FP

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STB6NK60Z

STB6NK60Z-1

STP6NK60ZFP

STP6NK60Z

B6NK60Z

Tape & reel

Tube

I²PAK

TO-220FP

TO-220

P6NK60ZFP

P6NK60Z

Tube

November 2007

Rev 8

1/17

www.st.com

12 3 4 5 6 7...17

中文翻译

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